Minimum magnetic field detection systems and methods in magnetoresistive sensors

ABSTRACT

Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. A sensor can comprise two magnetoresistive (xMR) sensor components for sensing two different aspects/characteristics of a magnetic field. The first xMR sensor component can be configured for magnetic field angle or rotation sensing, while the second xMR sensor component is configured for magnetic field strength sensing. The second xMR sensor component can be configured for magnetic field strength sensing in two dimensions. In an embodiment, the second xMR sensor can be sensitive to lower magnetic fields, while the first xMR sensor can be sensitive to relatively higher magnetic fields. In an exemplary operation, the second xMR sensor can determine whether the field sensed with respect to angle or rotation by the first xMR sensor component is of sufficient strength to increase the accuracy of the angle or rotation of the field sensed by the first xMR sensor.

TECHNICAL FIELD

The invention relates generally to magnetoresistive (xMR) sensors andmore particularly to detecting a minimum magnetic field amplitude whilealso sensing magnetic field angle or rotation in xMR sensors.

BACKGROUND

Magnetoresistive sensors, such as giant magnetoresistive (GMR), areoften used in angle sensing applications. A drawback of these sensors,however, is that while they can detect the direction of a magnetic fieldthey are not sensitive to the amplitude of the magnetic field. In someapplications this is of no consequence, but in others, such asautomotive, relevant safety standards require a minimum magnetic fieldto ensure angle accuracy. This can be important because angle errorgenerally increases at low magnetic fields, as depicted in FIG. 1. InFIG. 1, it can be seen that if the magnetic field strength falls belowabout 20 mT, the angle error increases significantly. Therefore, areduction or loss of magnetic field during operation must be detected incertain safety-related applications.

Conventional approaches include use of vertical Hall devices for anglesensing instead of GMR devices, or combining a GMR sensor for directionsensing with a Hall sensor for amplitude sensing. Vertical Hall devices,however, are not as sensitive as GMR devices, while the addition of alateral Hall device requires additional space that may be at a premiumor not available at all.

Therefore, there is a need for improved xMR angle sensors.

SUMMARY

Embodiments relate to magnetoresistive sensors. In an embodiment, amagnetoresistive (xMR) sensor comprises xMR magnetic field angle sensingcircuitry; and xMR magnetic field magnitude sensing circuitry arrangedin a sensor package with the xMR magnetic field angle sensing circuitry.

In an embodiment, a method comprises providing a first magnetoresistive(xMR) sensor in a sensor package; providing a second xMR sensor in thesensor package; sensing at least one characteristic of a magnetic fieldby the first xMR sensor; and determining whether a magnitude of thesensed magnetic field meets a minimum magnitude threshold by sensing themagnitude of the magnetic field by the second xMR sensor.

In an embodiment, magnetoresistive (xMR) sensor comprises xMR magneticfield angle sensing circuitry formed on a substrate; and xMR magneticfield magnitude sensing circuitry formed on the substrate.

In an embodiment, a magnetic field sensing system comprises anunder-field detector configured to determine whether a magnetic fieldsensed by the magnetic field sensing system operates in a first stateand to output an alarm signal based on the determining of the operationin the first state, wherein the first state corresponds to a state inwhich an external magnetic field to be sensed by the magnetic fieldsensing system is below a minimum threshold or is absent missing,wherein the under-field detector comprises a magnetoresistive (xMR)sensor arrangement, and wherein the alarm signal is based on acombination of signals tapped from the xMR sensor arrangement.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention may be more completely understood in consideration of thefollowing detailed description of various embodiments of the inventionin connection with the accompanying drawings, in which:

FIG. 1 is a plot of residual error versus magnetic field according to anembodiment.

FIG. 2 is a magnetoresistive (xMR) sensor circuit diagram according toan embodiment.

FIG. 3 is a depiction of an xMR sensor in a sensor package according toan embodiment.

FIG. 4A is a plot of the minor loop of a narrow xMR stripe according toan embodiment.

FIG. 4B is a plot of angle-dependent bridge output versus magnetic fieldangle according to an embodiment.

FIG. 4C is a plot of calculated vector length of FIGS. 4A and 4B versusmagnetic field angle according to an embodiment.

FIG. 4D is a plot of angle error of FIG. 4B versus magnetic field angleaccording to an embodiment.

FIG. 4E is a plot of calculated vector length versus magnetic fieldangle according to an embodiment.

FIG. 4F is a plot of resulting angle error versus magnetic field angleaccording to an embodiment.

FIG. 5 is a xMR sensor circuit diagram according to an embodiment.

FIG. 6 is a xMR sensor circuit diagram according to an embodiment.

FIG. 7 is a xMR sensor circuit diagram according to an embodiment.

While the invention is amenable to various modifications and alternativeforms, specifics thereof have been shown by way of example in thedrawings and will be described in detail. It should be understood,however, that the intention is not to limit the invention to theparticular embodiments described. On the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Embodiments relate to magnetoresistive sensors suitable for both angleand field strength sensing. In an embodiment, a sensor comprises twodifferent magnetoresistive (xMR) sensor components for sensing twodifferent aspects or characteristics of a magnetic field. In anembodiment, the first xMR sensor component is configured for magneticfield angle or rotation sensing, while the second xMR sensor componentis configured for magnetic field strength sensing. In an embodiment, thesecond xMR sensor component is configured for magnetic field strengthsensing in two dimensions. The second xMR sensor therefore candetermine, in embodiment, whether the field sensed with respect to angleor rotation by the first xMR sensor component is of sufficient strengthor meets a minimum magnitude threshold. If the minimum threshold is notmet, an alarm or alert can be provided. An advantage of embodiments, inaddition to the ability to sense field strength while also sensing angleor rotation, is that the two xMR sensor components can be processed inthe same way, with the same materials and same stacks for both angle andfield strength sensing. In an embodiment, the magnetoresistive sensorcomponents comprise giant magnetoresistive (GMR) sensor components,though other technologies can be used in various embodiments, includinganisotropic magnetoresistive (AMR) elements, tunneling magnetoresistive(TMR) elements, and others.

Referring to FIG. 2, a combined angle and field strength sensor 100 isdepicted. Sensor 100 comprises xMR angle sensing circuitry 102 andtwo-dimensional xMR field strength sensing circuitry 104. In anembodiment, GMR circuitry is used and will be referred to herein forexample only, with other magnetoresistive technologies can be used inother embodiments. It is therefore intended that embodiments are notlimited to GMR elements, such that the term GMR can be generallyinterchangeably used for other suitable technologies, such as AMR orTMR, unless specifically noted. For example, an embodiment comprising aGMR resistor could instead comprise a TMR element or AMR element or someother suitable technology.

Each of circuitries 102 and 104 comprise a bridge configuration of GMRresistors 106 and 108, respectively, for which the programmed hardmagnetization field direction is indicated in FIG. 2 by an arrow on eachresistor. In an embodiment, circuitries 102 and 104 are coupled by aswitch 110 such that circuitry 104 can be coupled or uncoupled. Inembodiments, circuitries 102 and 104 are formed side by side on the samedie or substrate, advantageously as part of the same production process,generally requiring only a layout change from circuitry 102 to circuitry104.

In embodiments, GMR resistors 106 and 108 of circuitries 102 and 104 arenarrowly shaped so as to generate a predefined reference magnetizationaxis for the sensor (free) layer by the shape anisotropy effect. Theshape anisotropy effect is the result of the demagnetization field thatis established at the edges of magnetic structures. As a result ofspecific shapes, such as narrow strips, there are preferred axes ofmagnetization, for example, along the length of each strip. This canalso be referred to as the “easy axis.” Consequently, the free layermagnetization for each GMR resistor 108 of circuitry 104 depends notonly on the angle of the external magnetic field but also on thestrength of the external magnetic field.

In embodiments, narrowly shaped GMR resistors 106 and 108 can be formedby narrowly shaped GMR resistor strips. For GMR resistor strips, theshape anisotropy axis is, for example, determined by the lengthdirection of the strips. The narrowly shaped GMR resistors of circuitry104 are arranged in two Wheatstone bridges. In circuitry 104, GMRresistors 108 of one bridge each have an orientation of the shapeanisotropy axis different from the orientation of the shape anisotropyof GMR resistors 108 of the other bridge. In embodiments, each of GMRresistors 108 of one bridge have substantially the same shape anisotropyaxis orientation, however GMR resistors 108 belonging to differentbridges have different orientations of the shape anisotropy axis. Inembodiments, the orientation of the anisotropy axis of GMR resistors 108of the first bridge and the orientation of the anisotropy axis of GMRresistors 108 of the second bridge are substantially perpendicular toeach other. With the configuration of the hard magnetizationperpendicular to the shape anisotropy axis, GMR resistors 108 arepredominantly sensitive to magnetic field components perpendicular totheir shape anisotropy axis orientation. In such a configuration, GMRresistors 108 of the first and second bridges are capable of detectingthe in-plane magnetic field components along the x- and y-orientation.The bridge of circuitry 104 shown on the left in FIG. 2 is capable ofdetecting the sine component of an external magnetic field, and thebridge of circuitry 104 shown on the right in FIG. 2 is capable ofdetecting the cosine component of the external magnetic field. Upon arotating magnetic field the outputs of the first and second bridges arephase shifted by approximately 90 degrees.

As will be explained later in more detail, signals tapped from thecircuitry 104 can be used in embodiments to determine a situation inwhich the absolute value or magnitude of the magnetic field vector, forexample the absolute value of a magnetic field vector caused by arotating magnetic field and detected by circuitry 102, falls below aminimum threshold in order to provide an alarm signal. This allowsestablishing a low-magnetic-alarm or a missing-field-alarm in xMRtechnology which can provide a safe operation of the overall sensorsystem including circuitry 102. For example, in one embodiment circuitry102 can be used by the user to sense an angle of a rotating magneticfield, and circuitry 104 can be used to determine when sensing circuitry102 is subjected to a situation of a low-magnetic field or a missingmagnetic field.

In the embodiment depicted, the Wheatstone bridges of circuitries 102and 104 are full bridges but also half bridges might be used in otherembodiments.

In the embodiment of FIG. 2, each branch of each bridge of circuitry 104comprises at least one GMR resistor 108 with a hard magnetization in afirst direction and a second direction. For the GMR resistors, the hardmagnetization can be the reference layer of the spin valve. Also for TMRresistors, the hard magnetization can be the reference layer of the spinvalve. In other embodiments, using AMR resistors, the hard magnetizationcan be a bias magnetic field biasing the AMR resistors. As shown in FIG.2, the first and second directions of the hard magnetization can beperpendicular. The two bridges of circuitry 104 can have a similarconfiguration but with different orientation of the shape anisotropyaxis of the GMR resistors. While the orientations of the shapeanisotropy axes are different, the shape anisotropy can be the same foreach of the GMR resistors of the two bridges of circuitry 104.Therefore, the two bridges of circuitry 104 can include the same shapeand configuration of GMR resistors but with the GMR resistors of thefirst bridge being rotated by 90 degree such that the shape anisotropyof the GMR resistors of the two bridges are perpendicular to each other.Additionally, while this embodiment shows two bridges for circuitry 104,other embodiments can include more than two bridges.

Furthermore, the two bridges of circuitry 102 and the two bridges ofcircuitry 104 can have substantially the same bridge configurationsexcept that the GMR resistors of circuitry 104 have a shape anisotropysubstantially higher than the shape anisotropy of the GMR resistors ofthe circuitry 102. FIG. 3 depicts an example embodiment of positioningsensor 100 with the additional circuitry 104 in an exemplary existingangle sensor package 112. In embodiments, GMR resistors 108 of xMRelement 104 are about 0.2 micrometers (μm) to about 2 μm wide, about 50μm to about 500 μm long and have a resistance of about 1 kΩ to about 10kΩ. In embodiments, the aspect ratio (length/width) can be between about4 and about 400. Laser programming can be used to define the hardmagnetization direction, and in embodiments the same laser magnetizationillumination window can be used to program the hard magnetization of theGMR resistors of both the angle and field strength xMR elements 102 and104.

In operation, angle sensing circuitry 102 is sensitive to a magneticfield direction while field strength sensing circuitry 104 is sensitiveto the magnetic field amplitude along an in-plane axis. Circuit 102 actsas angle sensing circuitry in view of the GMR resistors 108 beingprovided with a shape anisotropy substantially higher than the shapeanisotrophy of the GMR resistor 106 of the circuitry 102. Circuitry 104acts as field strength sensing circuitry in view of the GMR circuitry104 being generally sensitive to lower magnetic fields and in fact cango into saturation at higher fields, while circuitry 102 generally issensitive to relatively higher magnetic fields, in accordance with theprinciples of FIG. 1. Moreover, in view of the shape anisotropic effect,circuitry 104 generally is not accurate with respect to angle sensingbut rather can be used with respect to magnetic field strength levelsuch that angles sensed by circuitry 102 can be deemed sufficientlyaccurate.

There are however, at least two approaches to utilizing sensor 100:circuitry 104 can estimate the magnetic field strength, or circuitry 104can detect the presence or absence of a minimally acceptable magneticfield strength. Each will be discussed below.

Referring again to FIG. 2, a configuration of circuit 100 for the formerapproach, field strength estimation, is depicted. At low magneticfields, the magnetization along the so-called hard axis, or axis of hardmagnetization, being in embodiments perpendicular to the stripe lengthaxis, remains unsaturated due to the shape anisotropy effect. Refer, forexample, to FIG. 4A, which depicts the minor loop characteristic for aGMR or other xMR stripe with a width of 0.6 inn. The minor loopcharacteristic can be obtained by varying the external field along thehard magnetization axis. In this case, and referring to FIG. 4C, anestimation of the in-plane field strength can be done by calculating thevector length according to the following:Sqrt(V sin_narrow^2+V cos_narrow^2)Here, V sin_narrow is the voltage tapped between the two half-bridges ofthe bridge sensitive to the y-direction, and V cos_narrow is the voltagetapped between the two half-bridges of the bridge sensitive to thex-direction. If the vector length, averaged over a full rotation,under-runs a certain limit, such as 10 mT, an alarm can be set bycircuit 100. At the same time, the difference between the measured angleof circuitry 102 and circuitry 104 is very high, as shown in FIG. 4D; inthe example case of Brot=10 mT, a difference of up to about 18 degreesis expected according to exemplary numerical simulations. The xMR sensorelement configuration of circuitry 104 therefore acts as an under-fielddetector which can be used in magnetic field sensing system circuitry todetermine whether the magnetic field sensing system operates in a firststate which is a state corresponding to the external magnetic fieldbeing below a predetermined minimum threshold. The magnetic fieldsensing system can then include additional internal or externalcircuitry to determine that the situation is present. The additionalcircuitry can receive an output signal of the xMR sensor arrangement todetermine, based on this signal, whether the magnetic sensor isoperating in the first operation state. If so, the additional circuitrycan output to a logic circuit or processor an alarm signal based on thedetermining of the operation in the first state to indicate thedangerous or error condition. The logic or processor can in someembodiments start to act in response to the alarm signal for example toavoid possible dangerous or hazard situations.

For further discrimination of the magnetic field strength, thedifference of the measured magnetic field angle of the angle sensingcircuitry 102 and field strength sensing circuitry 104 can be evaluated.When a rotating field strength of about 30 mT is used, a maximum angledifference of about 8 degrees is depicted (refer to FIG. 4F), which isabout half for the example in which the magnetic field is 10 mT. Thisdifference decreases further with increasing magnetic field strength.

Turning to the second approach and referring to FIG. 5, at highermagnetic fields which exceed the linear range of the minor loop, thevector length is generally suitable only to determine the presence of aminimum magnetic field. To do this, V_(DIFF) can be monitored. V_(DIFF)is, in one example embodiment, the voltage difference between thevoltage signal tapped from one half-bridge of the first bridge ofcircuitry 104 and one half-bridge from the second bridge of circuitry104. When V_(DIFF) is substantially 0 and either V sin_narrow or Vcos_narrow are substantially 0, then the magnetic field can bedetermined to be too low or totally absent, for example, because themagnet generating the magnetic field has been removed or is broken.While one embodiment for tapping and combining signals to obtainV_(DIFF) is described, other combinations of signals tapped from thefirst and second bridge can be used and combined in different ways todetermine the presence of a minimum magnetic field.

Given the dual circuitries 102 and 104, multiplexing can also beimplemented in embodiments to provide signal path redundancy on-chip.This can be desired, for example, in some safety critical applications.Referring to FIG. 6, multiplexers 120 and an analog-to-digital converter(ADC) 122 can be coupled to circuitries 102 and 104 to use the samesignal path for both circuitry 102 and circuitry 104. Referring to FIG.7, angle and field strength sensor 100 can include a temperature sensor130 according to an exemplary embodiment. The temperature sensor 130 canbe configured to sense temperature of the angle and field strengthsensor 100 and generate a temperature signal 124 based on the sensedtemperature. The temperature signal 124 can be provided to temperatureADC 123 via multiplexers 120 to allow circuitry 104 and the temperaturesignal 124 to use the same signal path. In this example, the output ofcircuitry 102 is provided to ADC 122 so that the angle and fieldstrength sensor 100 generates two output signals—output signal from ADC122 and output signal from temperature ADC 123.

Embodiments thereby provide specially shaped xMR structures sensitive tofield amplitude integrated with xMR structures for angle sensing. Thefield amplitude portion can be used to sense the presence a minimummagnetic field or to estimate a field strength in embodiments, while theangle sensing portion can sense the field direction. In embodiments, thefield strength sensing portion can be produced in the same productionstep as the angle sensing portion and also magnetized, such as using ahigh-temperature anneal, in the same process step as the angle sensingportion. Also in embodiments, the same signal path can be used for theangle sensing portion to provide complete redundancy.

Various embodiments of systems, devices and methods have been describedherein. These embodiments are given only by way of example and are notintended to limit the scope of the invention. It should be appreciated,moreover, that the various features of the embodiments that have beendescribed may be combined in various ways to produce numerous additionalembodiments. Moreover, while various materials, dimensions, shapes,configurations and locations, etc. have been described for use withdisclosed embodiments, others besides those disclosed may be utilizedwithout exceeding the scope of the invention.

Persons of ordinary skill in the relevant arts will recognize that theinvention may comprise fewer features than illustrated in any individualembodiment described above. The embodiments described herein are notmeant to be an exhaustive presentation of the ways in which the variousfeatures of the invention may be combined. Accordingly, the embodimentsare not mutually exclusive combinations of features; rather, theinvention can comprise a combination of different individual featuresselected from different individual embodiments, as understood by personsof ordinary skill in the art. Moreover, elements described with respectto one embodiment can be implemented in other embodiments even when notdescribed in such embodiments unless otherwise noted. Although adependent claim may refer in the claims to a specific combination withone or more other claims, other embodiments can also include acombination of the dependent claim with the subject matter of each otherdependent claim or a combination of one or more features with otherdependent or independent claims. Such combinations are proposed hereinunless it is stated that a specific combination is not intended.Furthermore, it is intended also to include features of a claim in anyother independent claim even if this claim is not directly madedependent to the independent claim.

Any incorporation by reference of documents above is limited such thatno subject matter is incorporated that is contrary to the explicitdisclosure herein. Any incorporation by reference of documents above isfurther limited such that no claims included in the documents areincorporated by reference herein. Any incorporation by reference ofdocuments above is yet further limited such that any definitionsprovided in the documents are not incorporated by reference hereinunless expressly included herein.

For purposes of interpreting the claims for the present invention, it isexpressly intended that the provisions of Section 112, sixth paragraphof 35 U.S.C. are not to be invoked unless the specific terms “means for”or “step for” are recited in a claim.

What is claimed is:
 1. A magnetoresistive (xMR) sensor comprising: xMRmagnetic field angle sensing circuitry configured to determine amagnetic field angle of a magnetic field; and xMR magnetic fieldmagnitude sensing circuitry arranged in a sensor package with the xMRmagnetic field angle sensing circuitry, the xMR magnetic field magnitudesensing circuitry being configured to: determine a magnetic fieldstrength of the magnetic field; and determine an accuracy of themagnetic field angle determined by the xMR magnetic field angle sensingcircuitry based on the magnetic field strength.
 2. The xMR sensor ofclaim 1, wherein the xMR sensor comprises at least one of a giantmagnetoresistive (GMR) sensor, a tunneling magnetoresistive (TMR) sensoror an anisotropic magnetoresistive sensor (AMR).
 3. The xMR sensor ofclaim 1, wherein the xMR magnetic field angle sensing circuitry and thexMR magnetic field magnitude sensing circuitry each comprise aWheatstone bridge configuration.
 4. The xMR sensor of claim 1, wherein awidth of xMR sensing elements of the xMR magnetic field magnitudesensing circuitry is less than a width of xMR sensing elements of thexMR magnetic field angle sensing circuitry.
 5. The xMR sensor of claim1, wherein the xMR magnetic field angle sensing circuitry and the xMRmagnetic field magnitude sensing circuitry are arranged on a substrate.6. The xMR sensor of claim 1, wherein the xMR magnetic field anglesensing circuitry and the xMR magnetic field magnitude sensing circuitryare produced in a same production step.
 7. The GMR sensor of claim 1,wherein a magnetization reference of the xMR magnetic field anglesensing circuitry and a magnetization reference of the xMR magneticfield magnitude sensing circuitry are magnetized in a same productionstep.
 8. The xMR sensor of claim 7, wherein the xMR magnetic field anglesensing circuitry and the xMR magnetic field magnitude sensing circuitryare magnetized by a high-temperature anneal process.
 9. The xMR sensorof claim 1, further comprising a first multiplexer, a secondmultiplexer, and an analog-to-digital converter (ADC), the first andsecond multiplexers being coupled to the xMR magnetic field anglesensing circuitry and the xMR magnetic field magnitude sensingcircuitry, respectively, and the ADC being coupled to respective outputsof the first and second multiplexers.
 10. The xMR sensor of claim 1,further comprising: an analog-to-digital converter (ADC) coupled to thexMR magnetic field angle sensing circuitry; and a multiplexer coupled tothe xMR magnetic field magnitude sensing circuitry and to a temperaturesensor.
 11. The xMR sensor of claim 10, further comprising a temperatureanalog-to-digital converter (ADC) coupled to an output of themultiplexer.
 12. The xMR sensor of claim 1, wherein the xMR magneticfield magnitude sensing circuitry is configured to calculate a vectorlength from a first bridge voltage and a second bridge voltage of thexMR magnetic field magnitude sensing circuitry to determine the magneticfield strength of the magnetic field.
 13. The xMR sensor of claim 12,wherein the xMR magnetic field magnitude sensing circuitry is configuredto compare the vector length to a magnetic field strength thresholdvalue.
 14. The xMR sensor of claim 13, wherein the xMR magnetic fieldmagnitude sensing circuitry is configured to determine the accuracy ofthe magnetic field angle based on the comparison.
 15. The xMR sensor ofclaim 1, wherein the xMR magnetic field magnitude sensing circuitry isfurther configured to compare the magnetic field strength to a magneticfield strength threshold value, wherein the determining of the accuracyof the magnetic field angle is based on the comparison.
 16. The xMRsensor of claim 15, wherein the determining the accuracy of the magneticfield angle comprises: determining a first accuracy when the magneticfield strength is greater than the magnetic field strength thresholdvalue; and determining a second accuracy when the magnetic fieldstrength is less than the magnetic field strength threshold value. 17.The xMR sensor of claim 15, wherein the determining the accuracy of themagnetic field angle comprises: identifying the magnetic field angle asaccurate when the magnetic field strength is greater than the magneticfield strength threshold value; and identifying the magnetic field angleas inaccurate when the magnetic field strength is less than the magneticfield strength threshold value.
 18. The xMR sensor of claim 16, whereinthe first accuracy identifies the magnetic field angle as accurate andthe second accuracy identifies the magnetic field angle as inaccurate.